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Intel, Samsung Describe Embedded MRAM Technologies


eetimes.com, SAN FRANCISCO, Dec. 11, 2018 – 

The world's two largest semiconductor companies both presented new technologies for embedded MRAM in logic chip manufacturing processes last week at the 64th International Electron Devices Meeting (IEDM) here.

Intel (Santa Clara, California) described the key features of spin-transfer torque (STT)-MRAM–based non-volatile memory into its 22FFL process, calling it "the first FinFET-based MRAM technology." Describing the technology as "production-ready," Intel did not name any foundry customers for the process, but multiple sources said that it is already being used in products now shipping.

Samsung (Seoul), meanwhile, described STT – MRAM in a 28-nm FDSOI platform. STT-MRAM is regarded as the best MRAM technology in terms of scalability, shape dependence, and magnetic scalability.

MRAM technology has been in development since the 1990s but has yet to achieve widespread commercial success. "I think it's time we show something manufacturable and something commercial," said Yoon Jong Song, a principal engineer in Samsung's R&D center and the lead author of the company's IEDM paper.

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