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Attopsemi's I-fuse OTP Passed 250 degrees Celsius for 1,000hrs Wafer-level Burn-in Studies on GLOBALFOUNDRIES 22FDX FD-SOI Technology


Attopsemi's I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for automotive and IoT applications.

Santa Clara, California --- November 19, 2018 – Attopsemi Technology, an OTP IP provider, announced today that the company’s 256Kb OTP (One-Time Programmable) IP passed 250°C and 1,000 hours wafer-level burn-in studies. When programming I-fuse™ within the specifications, no defect was found in tens of millions I-fuses™ after several stress conditions. Moreover, the post-stressed I-fuse™ resistance has very minor changes.

“Other than the advanced features of small size and low program voltage/current, we showed the world that I-fuse™ can sustain 250°C 1,000hrs and still maintain ultra-high reliability,” said Shine Chung, Chairman of Attopsemi. “I am thankful for GF’s superior CMOS process to demonstrate our I-fuse™ can achieve the performance of great merit,” added by Shine.



OTP IP Cores

“We sincerely appreciate all the supports from GF in developing our proprietary I-fuse™ OTP technology on 22FDX®,” said Shine Chung. “After many years of dedicated works and collaboration with foundries and customers worldwide, our I-fuse™ technology has finally been demonstrated at elevated temperature. We have proven that I-fuse™ can ensure high reliability with smaller size by using a fraction of program current. With our superior OTP IP, we expect to bring substantial benefits to all semiconductor communities.”

About Attopsemi Technology
Founded in 2010, Attopsemi Technology is dedicated to developing and licensing fuse-based One-Time Programmable (OTP) IP to all CMOS process technologies from 0.7um to 7nm and beyond with various silicided polysilicon and HKMG technologies. Attopsemi provides the best possible OTP solutions for all merits in small size, high quality, high reliability, low power, high speed, wide temperature and high data security. Attopsemi's proprietary I-fuse™ OTP technologies have been proven in numerous CMOS technologies and in several silicon foundries.

Attopsemi's I-fuse OTP Passed 250 degrees Celsius for 1,000hrs Wafer-level Burn-in Studies on GLOBALFOUNDRIES 22FDX FD-SOI Technology

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