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IEDM: Intel embeds MRAM in FinFET process


By Peter Clarke , Oct. 30, 2018 – 

The company is due to present a paper outlining the technology at the International Electron Devices Meeting (IEDM) that takes place December 1 to 5 in San Francisco, California.

While this is an academic presentation and does not guarantee a commercial offering will follow, it seems likely that Intel will follow through, not least because TSMC is reported to be due to offer embedded MRAM at 22nm FinFET this year.

Flash memory, which was the embedded NVM of choice up until about 40nm process nodes, has difficulties scaling below 28nm. For this reason foundries Globalfoundries and Samsung have both offered embedded MRAM options in their fully-depleted silicon-on-insulator (FDSOI) processes (see Globalfoundries offers embedded MRAM on 22nm FDSOI and FDSOI to get embedded MRAM, flash options at 28nm).

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