Find Top SoC Solutions
for AI, Automotive, IoT, Security, Audio & Video...

ASML, IMEC to take EUV lithography to high-NA

By Peter Clarke , Oct. 30, 2018 – 

The research agreement covers both the improvement of high-volume production with current systems and the development of future EUV systems using a high numerical aperture (NA) of 0.55. The two companies plan to establish a joint high-NA EUV research lab.

Research with the current NA of 0.33 will be based on the installation of an NXE:3400B,  ASML's most advanced and high-volume production EUV scanner in IMEC's cleanroom at its wafer fab in Leuven.

With a 250W light source the NXE:3400B is capable of processing more than 125 wafers an hour, a throughput benchmark in commercial IC production. Other changes may include alignment and leveling sensors, to enable optimal process control and facilitate overlay matching to the immersion scanner NXT:2000i. In commercial fabs EUV lithography is used for critical layers while lower cost immersion scanners are used for the majority of wafer processing making precision alignment a key requirement.

click here and read more


Partner with us

Visit our new Partnership Portal for more information.

Submit your material

Submit hot news, product or article.

List your Products

Suppliers, list and add your products for free.

More about D&R Privacy Policy

© 2018 Design And Reuse

All Rights Reserved.

No portion of this site may be copied, retransmitted,
reposted, duplicated or otherwise used without the
express written permission of Design And Reuse.