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Automotive ultra-low On-resistance MOSFET in thermal-improved package


Sept. 04, 2018 – 

Toshiba Electronics Europe has introduced two new 40V N-channel power MOSFETs using DSOP Advance (WF) packages with double-sided cooling capability. Both devices are based upon the latest trench structure U-MOSIX-H process and are AEC-Q101 qualified. They target applications such as electric power steering (EPS), load switches and electric pumps.

The TPWR7940PB is a 40V max 0.79mΩ MOSFET in DSOP Advance(WF)L package, while and the TPW1R104PB is a 40V max 1.14mΩ MOSFET in DSOP Advance(WF)M package. Both DSOP Advance package types are 5mm x 6mm packages with 8 pins.  They differ in their exposed surface area of the top metal plate. The top exposed area is about 8mm 2 in DSOP Advance(WF)M and about 12mm 2 in DSOP Advance (WF)L. Measured in Toshiba's test environment, the maximum channel-to-top-plate thermal impedance is 1.5K/W for the TPW1R104PB and 0.93K/W for TPWR7940PB. Their excellent thermal performance is achieved by attaching the top exposed area to a heatsink (such as a metal frame) via an insulating layer.

The DSOP Advance (WF)M and DSOP Advance (WF)L packages are footprint-compatible with an SOP Advance (WF) package that has no exposed top metal area. The DSOP Advance (WF)M and DSOP Advance (WF)L packages employ a wettable flank terminal structure that enables AOI(Automated Optical Inspection) of solder joints on PCBs. AOI is especially important in automotive applications where verification of soldering quality is required.

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