www.design-reuse-embedded.com
Find Top SoC Solutions
for AI, Automotive, IoT, Security, Audio & Video...

Samsung Plans 3nm Gate-All-Around FETs in 2021

Dylan McGrath, EETimes
5/23/2018 00:01 AM EDT

SANTA CLARA, Calif. — Samsung Electronics laid out plans to bring to mass production in 2021 the architectural successor to FinFETS, gate-all-around (GAA) transistors, at the 3nm node. The South Korean giant also reaffirmed plans to begin 7nm production using extreme ultraviolet (EUV) lithography in the second half of this year at its annual foundry technology forum here Tuesday (May 22).

GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.

Click here to read more ...

Samsung Plans 3nm Gate-All-Around FETs in 2021

 Back

Partner with us

Visit our new Partnership Portal for more information.

Submit your material

Submit hot news, product or article.

List your Products

Suppliers, list and add your products for free.

More about D&R Privacy Policy

© 2018 Design And Reuse

All Rights Reserved.

No portion of this site may be copied, retransmitted,
reposted, duplicated or otherwise used without the
express written permission of Design And Reuse.