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samsung foundry updates 7nm euv 10lpp and 14lpc

By Joshua Ho, Apr. 22, 2016 – 

Earlier this week, Samsung announced a number of updates on the foundry side of their business. While process technology might not be necessarily as interesting as the actual end product from a consumer perspective, it can often give us a good idea for what to expect in terms of performance and power from future products. Of course, it's up to the various fabless chip design companies around the world to actually exploit the full potential of a process, but in general power and performance are often gated by process node. Almost everything in computing revolves around supporting abstractions, which inevitably means overhead to support these abstractions, so progress at the foundry level is critical for moving the industry forward as a whole.

The first, and probably most important announcements are related to process roadmap. The most important point that Samsung made here was that they fully intend to deploy extreme UV (EUV) in mass production for their 7nm processes, which is a pretty significant claim to make as even imec was reluctant to say that EUV would be happening at 7nm. However, those at Samsung seem to believe that this is necessary because otherwise the first metal interconnect layer would require triple patterning, and the transistors themselves would likely be facing similar multiple patterning requirements.


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