Samsung's 14 nm LPE FinFET Transistors

As Samsung prepares to launch its 14 nm Low Power Plus (LPP) process used in the Exynos 8 SoC, TechInsights anticipates what changes we should expect.

By Kevin Gibb, Product Line Manager, TechInsights, EEtimes, Jan. 19, 2016 – 

Samsung's Exynos 8 SoC is receiving some press buzz as the company prepares to launch its 14 nm Low Power Plus (LPP) process that is an update to its current Low Power Early (LPE) process used in its Exynos 7 SoC and the Apple A9 SoC.

There are now three foundries capable of making finFET transistors: Intel, Samsung and TSMC. We at TechInsights last looked at Samsung's 14 nm low power early (LPE) finFET process used in Exynos 7420 SoC in May of 2015 (Samsung Galaxy S6 Edge Smartphone). We were a little coy in our discussions of the process technology used to make the transistors; our business after all is to sell reports describing just this.

It is almost a year on now and there is talk of Samsung's updated 14 nm LPP finFET process. We won't know the details of this process until we get our hands on some samples of either Samsung's Exynos 8890 SoC, or Qualcomm's Snapdragon 820 SoC later this spring, but we can reveal more of the 14 nm LPE process technology used in the Exynos 7420.

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